| PART |
Description |
Maker |
| 27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40
4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40
Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
|
| EN29F002 EN29F002N EN29F002T-70J EN29F002T-90TI EN |
2 Megabit (256K x 8-bit) Flash Memory
2 Megabit (256K x 8-bit) flach memory. Speed 90ns. 5.0V -10% for both read/write operation. With RESET function.
|
Eon Silicon Solution
N.A.
ETC[ETC]
|
| AT49BV4096A AT49BV4096A-12RC AT49BV4096A-12RI AT49 |
LM4250 Programmable Operational Amplifier; Package: SOIC NARROW; No of Pins: 8 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40
LM4308 Mobile Pixel Link Two (MPL-2) - 18-bit CPU Display Interface Master/Slave; Package: MICRO-ARRAY; No of Pins: 49 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO40
4-Megabit 512K x 8/ 256K x 16 CMOS Flash Memory 256K X 16 FLASH 2.7V PROM, 120 ns, PDSO48
|
Atmel, Corp.
Atmel Corp.
ATMEL[ATMEL Corporation]
|
| S29CD016G0JQFA212 S29CD032G0MFAA102 S29CD016G0MQAI |
32 Megabit (1M x 32-Bit), 16 Megabit (512K x 32-Bit) 2.5 Volt-only Burst Mode, Dual Boot, Simultaneous Read/ Write Flash Memory with VersatileI/O
|
SPANSION
|
| AM29DL800BB120FI AM29DL800BB90SEB AM29DL800BT90SEB |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 70 ns, PDSO44
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 1M X 8 FLASH 3V PROM, 120 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 512K X 16 FLASH 3V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory 8兆位 M中的x 8-Bit/512亩x 16位）.0伏的CMOS只，同时作业快闪记忆
|
Advanced Micro Devices, Inc.
http://
|
| AM27C4096 AM27C4096-100DC AM27C4096-100DCB AM27C40 |
6-bit buffers and line drivers 16-SO 0 to 70
Hex Bus Drivers With 3-State Outputs 16-SOIC 0 to 70
4 Megabit (256 K x 16-Bit) CMOS EPROM 256K X 16 OTPROM, 200 ns, PQCC44
4 Megabit (256 K x 16-Bit) CMOS EPROM 256K X 16 UVPROM, 200 ns, CDIP40
4 Megabit (256 K x 16-Bit) CMOS EPROM 256K X 16 OTPROM, 200 ns, PDIP40
TV 37C 37#22D SKT PLUG 256K X 16 OTPROM, 100 ns, PDIP40
4 Megabit (256 K x 16-Bit) CMOS EPROM 4兆位56亩16位）的CMOS存储
4 Megabit (256 K x 16-Bit) CMOS EPROM 256K X 16 UVPROM, 90 ns, CDIP40
TV 10C 10#20 PIN PLUG
6-bit buffers and line drivers 16-PDIP 0 to 70
TV 37C 37#22D PIN PLUG
TV 18C 18#20 SKT WALL RECP
TV 19C 19#20 PIN WALL RECP
TV 10C 10#20 SKT PLUG
6-bit buffers and line drivers 16-SOIC 0 to 70
Circular Connector; MIL SPEC:MIL-DTL-38999 Series III; Body Material:Metal; Series:TVS06; Number of Contacts:10; Connector Shell Size:13; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
|
ADVANCED MICRO DEVICES INC
Advanced Micro Devices, Inc.
AMD[Advanced Micro Devices]
|
| AM29F040-90PCB AM29F040-90FCB AM29F040-90ECB AM29F |
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PQCC32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 90 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 4兆位24,288 × 8位）的CMOS 5.0伏只，扇区擦除闪
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 150 ns, PDIP32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 55 ns, PDSO32
4 Megabit (524,288 x 8-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory 512K X 8 FLASH 5V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| 79LV2040RPFE-20 79LV2040RPFH-20 79LV2040RPFK-20 79 |
20 Megabit (512K x 40-Bit) Low Voltage EEPROM MCM 512K X 40 EEPROM 3V, 250 ns, PDFP100
|
Maxwell Technologies, Inc
|
| CY7C1355B-117BGI CY7C1355B-117BZC CY7C1355B-117BGC |
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 9 - MB的（256 × 36/512K × 18）流体系结构，通过与总线延迟静态存储器
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 6.5 ns, PBGA165
9-Mb (256K x 36/512K x 18) Flow-Through SRAM with NoBL Architecture 256K X 36 ZBT SRAM, 7 ns, PQFP100
|
Cypress Semiconductor Corp.
Cypress Semiconductor, Corp.
|
| S29CD016J0JDGH114 S29CD016J1JDGH037 S29CD016J1MDGH |
16 Megabit (512k x 32-Bit) CMOS 2.6 or 3.3 Volt-only Burst Mode, Dual Boot, Simultaneous Read/Write Flash Memory 512K X 32 FLASH 2.7V PROM, 54 ns, UUC74
|
Spansion, Inc.
SPANSION LLC
|
|
